The complete applications list mentioned below under Application heading.

but it is not limited to these uses and can be used in variety of other power supply and battery charging circuits. But it can also be used for wide variety of other applications.Īs discussed above IRFB4110 is designed to use in variety of small and big uninterruptible power supply circuits, switch mode power supplies etc.

The primary applications for this MOSFET are UPS, high speed switching circuits, high frequency applications, hard switch etc. The transistor has quite interesting specs, the maximum drain to source voltage is 100V, maximum continuous drain current is 180A and the maximum pulsed drain current is 670A and the total power dissipation of the transistor is 370W. The maximum continuous drain current of 180A also makes it an ideal MOSFET to use in applications where the designer wants to drive high amount of load. Moreover the maximum junction temperature of 175☌ makes it capable to deliver more power when its temperature is high as compare to low temperature MOSFETS. Looking at the other capabilities, the transistor possesses high switching speed which makes it ideal to use in applications where high speed switching is an essential requirement. The transistor has many features and benefits such has it has better gate, better dynamic dv/dt ratings, fully characterized capacitance etc. IRF4110 is an N channel MOSFET available in TO-220AB package. IRFB4110 Transistor Explained / Description:Īre you looking for a highly efficient MOSFET to use in your SMPS and UPS Systems then the IRFB4110 might be a good choice for you.

Max Storage & Operating temperature Should Be: -55 to +175 Centigrade.

Max Drain to Source Resistance in ON State (RDS on): 4.5mΩ.

Max Gate to Source Voltage Should Be: ± 20V.

Max Voltage Applied From Drain to Source: 100V.

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